ABSORBER NAME

Foil

A

B

C

Tungsten

Scintillator

THICKNESSES,MICRONS

0.3

38.7

900.0

2700.0

14573.0

5000.0

ABSORBER MATERIAL

NICKEL

SILICON

SILICON

SILICON

GOLD

SILICON

THICKNESS VARIATION,MICRONS

0.0

3.9

5.0

10.0

100.0

5.0

CONICAL HALF ANGLE,DEGREES

22.5

22.5

22.5

22.5

0.0

0.0

DETECTOR NOISE,MEV

0.029

0.000

0.000

0.010

ELECTRONIC NOISE,MEV

0.000

0.010

0.010

0.000

NUMBER OF THRESHOLDS SET

0.0

9.0

8.0

5.0

0.0

1.0

THRESHOLD LEVEL NO.1

A0

0.177

B0

0.185

C1

1.470

M

0.500

THRESHOLD LEVEL NO.2

A1

0.208

B1

0.206

C2

2.930

THRESHOLD LEVEL NO.3

A2

0.430

B2

0.451

C3

3.970

THRESHOLD LEVEL NO.4

A3

0.910

B3

0.813

C4

7.140

THRESHOLD LEVEL NO.5

A4

2.17

B4

3.850

C5

26.90

THRESHOLD LEVEL NO.6

A5

4.37

B5

7.600

THRESHOLD LEVEL NO.7

A6

8.42

B6

14.800

THRESHOLD LEVEL NO.8

A7

18.9

B7

60.000

THRESHOLD LEVEL NO.9

A8

170.3

AVERAGE PROJECTED DEPTH,MIC

0.4

40.2

935.6

2806.8

14573.0

0.0

EST.RMS VARN.PROJ.DEPTH,MIC

0.0

1.6

37.1

111.2

0.0

0.0

NET RMS THICKNESS VARN.(MIC)

0.0

4.2

37.4

111.7

100.0

5.0

LOWER LIMIT THICKNESS(MIC)

0.3

36.0

898.2

2695.1

14473.0

-5.0

UPPER LIMIT THICKNESS(MIC)

0.4

44.4

973.0

2918.5

14673.0

5.0

P1

A1(A2)(B1)

A1

(A2)

(B1)

2

2

1

2

3

-1

3

2

-1

P2

A2(A3)(B1)

A2

(A3)

(B1)

2

3

1

2

4

-1

3

2

-1

P3

A3 (B1)

A3

(B1)

2

4

1

3

2

-1

P4

A1 B1(B4)(C1)

A1

B1

(B4)

(C1)

2

2

1

3

2

1

3

5

-1

4

1

-1

P5

A1 B4(C1)

A1

B4

(C1)

2

2

1

3

5

1

4

1

-1

P7

B4(B7)C4

B4

(B7)

C4

3

5

1

3

8

-1

4

4

1

P8

B3(B4)C4

B3

(B4)

C4

3

4

1

3

5

-1

4

4

1

P9

B3(B4)C3(C4)

B3

(B4)

C3

(C4)

3

4

1

3

5

-1

4

3

1

4

4

-1

P10

B3 C2(C3)

B3

C2

(C3)

3

4

1

4

2

1

4

3

-1

P11

B0(B3)C1(C2)

B0

(B3)

C1

(C3)

3

1

1

3

4

-1

4

1

1

4

3

-1